| 50+ |
￥0.049209
|
| 500+ |
￥0.04016
|
| 3000+ |
￥0.030048
|
| 6000+ |
￥0.027032
|
| 24000+ |
￥0.024418
|
| 51000+ |
￥0.023011
|
| 数量 |
|
40V 225mW 100@10mA,1V 200mA NPN SOT-23 Bipolar Transistors - BJT ROHS
属性 |
参数值 |
|
Collector Cut-Off Current (Icbo) |
- |
|
Collector-Emitter Breakdown Voltage (Vceo) |
40V |
|
Power Dissipation (Pd) |
225mW |
|
DC Current Gain (hFE@Ic,Vce) |
100@10mA,1V |
|
Collector Current (Ic) |
200mA |
|
Transition Frequency (fT) |
300MHz |
|
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) |
400mV@50mA,5mA |
|
Transistor Type |
NPN |
|
Operating Temperature |
+150℃@(Tj) |
中文(CNY)
English(USD)
