50V 200mW 135@1mA,6V 100mA NPN SOT-23 Bipolar Transistors - BJT ROHS
属性 |
参数值 |
|
Collector Cut-Off Current (Icbo) |
100nA |
|
Collector-Emitter Breakdown Voltage (Vceo) |
50V |
|
Power Dissipation (Pd) |
200mW |
|
DC Current Gain (hFE@Ic,Vce) |
135@1mA,6V |
|
Collector Current (Ic) |
100mA |
|
Transition Frequency (fT) |
250MHz |
|
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) |
300mV@100mA,10mA |
|
Transistor Type |
NPN |
|
Operating Temperature |
+150℃@(Tj) |
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