| 20+ |
￥0.129612
|
| 200+ |
￥0.104537
|
| 600+ |
￥0.090607
|
| 3000+ |
￥0.07244
|
| 9000+ |
￥0.065196
|
| 21000+ |
￥0.061296
|
| 数量 |
|
25V 350mW 160@100mA,1V 1.5A NPN SOT-23 Bipolar Transistors - BJT ROHS
属性 |
参数值 |
|
Collector Cut-Off Current (Icbo) |
100nA |
|
Collector-Emitter Breakdown Voltage (Vceo) |
25V |
|
Power Dissipation (Pd) |
350mW |
|
DC Current Gain (hFE@Ic,Vce) |
160@100mA,1V |
|
Collector Current (Ic) |
1.5A |
|
Transition Frequency (fT) |
100MHz |
|
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) |
280mV@800mA,80mA |
|
Transistor Type |
NPN |
|
Operating Temperature |
+150℃@(Tj) |
中文(CNY)
English(USD)
