| 50+ |
￥0.052938
|
| 500+ |
￥0.047358
|
| 3000+ |
￥0.042271
|
| 6000+ |
￥0.040949
|
| 数量 |
|
45V 200mW 200@5mA,1V 100mA NPN TO-236-3 Bipolar Transistors - BJT ROHS
属性 |
参数值 |
|
Collector Cut-Off Current (Icbo) |
50nA |
|
Collector-Emitter Breakdown Voltage (Vceo) |
45V |
|
Power Dissipation (Pd) |
200mW |
|
DC Current Gain (hFE@Ic,Vce) |
200@5mA,1V |
|
Collector Current (Ic) |
100mA |
|
Transition Frequency (fT) |
100MHz |
|
Transistor Type |
NPN |
|
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) |
250mV@100mA,10mA |
|
Operating Temperature |
+150℃@(Tj) |
中文(CNY)
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