| 20+ |
￥0.166379
|
| 200+ |
￥0.134879
|
| 600+ |
￥0.117379
|
| 2000+ |
￥0.0959
|
| 10000+ |
￥0.0868
|
| 20000+ |
￥0.0819
|
| 数量 |
|
20V 1W 120@150mA,1V 700mA PNP TO-92-3 Bipolar Transistors - BJT ROHS
属性 |
参数值 |
|
Collector Cut-Off Current (Icbo) |
1uA |
|
Collector-Emitter Breakdown Voltage (Vceo) |
20V |
|
Power Dissipation (Pd) |
1W |
|
DC Current Gain (hFE@Ic,Vce) |
120@150mA,1V |
|
Collector Current (Ic) |
700mA |
|
Transition Frequency (fT) |
100MHz |
|
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) |
500mV@500mA,50mA |
|
Transistor Type |
PNP |
|
Operating Temperature |
+150℃@(Tj) |
中文(CNY)
English(USD)
