65V 200mW 220@2mA,5V 100mA PNP SOT-23 Bipolar Transistors - BJT ROHS
属性 |
参数值 |
Collector Cut-Off Current (Icbo) |
100nA |
Collector-Emitter Breakdown Voltage (Vceo) |
65V |
Power Dissipation (Pd) |
200mW |
DC Current Gain (hFE@Ic,Vce) |
220@2mA,5V |
Collector Current (Ic) |
100mA |
Transition Frequency (fT) |
100MHz |
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) |
500mV@100mA,5mA |
Transistor Type |
PNP |
Operating Temperature |
+150℃@(Tj) |