| 50+ |
￥0.056527
|
| 500+ |
￥0.046087
|
| 3000+ |
￥0.038802
|
| 6000+ |
￥0.035322
|
| 24000+ |
￥0.032306
|
| 51000+ |
￥0.030682
|
| 数量 |
|
60V 200mW 135@1mA,6V 100mA NPN SOT-23 Bipolar Transistors - BJT ROHS
属性 |
参数值 |
|
Collector Cut-Off Current (Icbo) |
100nA |
|
Collector-Emitter Breakdown Voltage (Vceo) |
60V |
|
Power Dissipation (Pd) |
200mW |
|
DC Current Gain (hFE@Ic,Vce) |
135@1mA,6V |
|
Collector Current (Ic) |
100mA |
|
Transition Frequency (fT) |
250MHz |
|
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) |
300mV@100mA,10mA |
|
Transistor Type |
NPN |
|
Operating Temperature |
+150℃@(Tj) |
中文(CNY)
English(USD)
