| 5+ |
￥0.8179
|
| 50+ |
￥0.6499
|
| 150+ |
￥0.5779
|
| 500+ |
￥0.488
|
| 2500+ |
￥0.448
|
| 5000+ |
￥0.424
|
| 数量 |
|
30V 64A 4mΩ@10V,20A 33W N Channel DFN-8(3.1x3.2) MOSFETs ROHS
属性 |
参数值 |
|
Drain Source Voltage (Vdss) |
30V |
|
Continuous Drain Current (Id) |
64A |
|
Drain Source On Resistance (RDS(on)@Vgs,Id) |
4mΩ@10V,20A |
|
Power Dissipation (Pd) |
33W |
|
Gate Threshold Voltage (Vgs(th)@Id) |
1.7V@250uA |
|
Reverse Transfer Capacitance (Crss@Vds) |
260pF@15V |
|
Type |
N Channel |
|
Input Capacitance (Ciss@Vds) |
1.93nF@15V |
|
Total Gate Charge (Qg@Vgs) |
38nC@10V |
|
Operating Temperature |
-55℃~+150℃@(Tj) |
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